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CFD-TOPO is a feature scale evolution solver used to predict the transport, chemistry, etch and deposition of semiconductor materials on the microscopic scale. It enables prediction of three-dimensional topological evolution for multiple materials during thermal or plasma enhanced fabrication of electronic devices.
Designed primarily for the Semiconductor industry, CFD-TOPO is a flexible, modular software package that can be operated as a stand-alone code, or coupled with CFD-ACE+ reactor scale models for an integrated multi-scale solution. Advanced capabilities of CFD-TOPO include:
- Three-dimensional
- Multiple materials and complex chemistries
- Fast adaptive meshing
- Fully integrated with CFD-ACE+
- Fully commercialized and supported
- Can be customized for a specific reactor or processes, for ease-of-use and accuracy
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