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Agenda for Day 1 of Training
9:00 – 10:30 Introduction to CFD-ACE+ Plasma
- Overview of Plasma Applications and Modeling
- Plasma types and applications
- Introduction to Plasma Modeling
- Hierarchy of Models
- Drift-Diffusion Approximation
- Basic Equations of the Plasma Fluid Model
- Simplification for Inductively Coupled Plasma
- Plasma Gas-Phase Chemistry
- Plasma Surface Chemistry
- Diffusivity and Mobility
- Neutral Gas Heating by Plasma
- Ion Surface Heating
----------------------------------20 Min Break------------------------------------------
10:50 – 11:45 CFD-ACE+ Database
- How to create gas, surface and bulk species
- How to create mixture definitions
- How to create surface sites
- How to create volume reaction mechanisms
- How to create surface reaction mechanisms
------------------------------ Lunch (11.45 – 13:15) ----------------------------------
13:15 – 15:30 Tutorial 1: CFD-ACE+ 2D CCP Reactor
• Problem Type (PT)
— Flow, Chemistry, Plasma, Electric
• Model Options (MO)
— Shared: Axi-symmetric geometry, Transient solution
— Flow: Ref. Pressure
— Chem: Gas Phase Reaction with Species Mass Fraction
— Plasma: CCP; 1-Capacitor external circuit; CCP time step size
• Volume Conditions (VC)
— Properties: density, visc, diffusivity, mobility, Electron Coll.
• Boundary Conditions (BC)
— Wall: surface recombination; electron flux; sinusoidal voltage
— Inlet: inlet flow rate/velocity; composition
— Outlet: fixed pressure; zero-gradient for out flowing variables
• Initial Conditions (IC)
— Chem: initial ions density
— Plasma: Te = const, Ne from Quasi-Neutrality
• Solver Control (SC)
— Iter, Spatial, Matrix Solvers, Relax, Limits, Adv
• Output (Out)
— Output, Print, Graphic, Monitor
• Run and Monitor (Run)
— Job submit
— How to determine the solution convergence
• DTF update through Model.in
— Additional commands
• View and Analyze results using CFD-VIEW
15:30 – 16:30 Discussions and Further Exercises for CCP
- Ion Momentum Equation
- Cross-Section Based Electron Collision
- Fixed CCP power
-------------------------------- END Day 1 Training Session -----------------------
Agenda for Day 2 of Training
9:00 – 9:30
Introduction to Kinetic Modeling
9:40 – 11:40 Tutorial 2: 2-D Axisymmetric SiO2 Deposition Process in SiH4/O2/Ar ICP Raector
• Problem Type (PT)
— Flow, Chemistry, Heat, Plasma, Magnet
• Model Options (MO)
— Shared: Axi-symmetric geometry, Steady-State solution
— Flow: Ref. Pressure
— Chem: Gas Phase Reaction with Species Mass Fraction
— Plasma: ICP, Induction Power Control
— Magnet: AC Single Frequency Solution; AC Freq
• Volume Conditions (VC)
— Properties: density, visc, diffusivity, mobility, Electron Coll.
— Magnet: magnetic sources, fixed AC coil current
• Boundary Conditions (BC)
— Wall: surface recombination, electron energy flux
— Inlet: Sonic inlet velocity, composition
— Outlet: fixed pressure
• Initial Conditions (IC)
— Chem: initial ions density
— Plasma: Te = const, Ne from Quasi-Neutrality
• Solver Control (SC)
— Iter, Spatial, Matrix Solvers, Relax, Limits, Adv
• Output (Out)
— Output, Print, Graphic, Monitor
• Run and Monitor (Run)
— Job submit; Residual and Monitors on solution convergence
• View and Analyze Results using CFD-VIEW
11:45 – 12:15 Discussions and Further Exercises for ICP
- Thermal Flux Balance BC for Te
- Fixed ICP Power
- Ion Kinetic Energy + Joule Heating for Gas
---------------------------------LUNCH (12:15 – 13:45) ------------------------------
13:45 – 14:30 Introduction to Feature Scale Modeling and its coupling with Reactor Scale
14:30 – 17:00 Discussions, Q&A Session and working on the problems designed by trainees (you are highly encouraged to bring your own problems)
17:00 – 17:30 Wish lists from trainees for future development
************************ END Training Session ***********************
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